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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
June 2009
FSEZ1016A (EZSWITCHTM,
Features
Constant-Voltage (CV) and Constant-Current (CC) Control without Secondary-Feedback Circuitry Accurate Constant Current Achieved by Fairchild's Proprietary TRUECURRENTTM Technique Green Mode: Frequency Reduction at Light-Load Fixed PWM Frequency at 43kHz with Frequency Hopping to Reduce EMI Low Startup Current: 10A Maximum Low Operating Current: 3.5mA Peak-Current-Mode Control in CV Mode Cycle-by-Cycle Current Limiting Over-Temperature Protection (OTP) with Auto-Restart Brownout Protection with Auto-Restart VDD Over-Voltage Protection (OVP) with Auto-Restart VDD Under-Voltage Lockout (UVLO) SOIC-7 Package
TM)
Description
The primary-side PWM integrated power MOSFET (EZSWITCHTM), FSEZ1016A, significantly simplifies power supply designs that require CV and CC regulation capabilities. FSEZ1016A controls the output voltage and current precisely with only the information in the primary side of the power supply, not only removing the output current sensing loss, but also eliminating all secondary feedback circuitry. The green-mode function with a low startup current (10A) maximizes the light-load efficiency so the power supply can meet stringent standby power regulations. Compared with conventional secondary-side regulation approach; the FSEZ1016A can reduce total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability. FSEZ1016A is available in a 7-pin SOIC package. A typical output CV/CC characteristic envelope is shown in Figure 1.
Primary-Side-Regulation PWM Integrated Power MOSFET
Applications
Battery Chargers for Cellular Phones, Cordless Phones, PDAs, Digital Cameras, Power Tools Replaces Linear Transformer and RCC SMPS Offline High Brightness (HB) LED Drivers
Related Resources
AN-6067 Design Guide for FAN100/102 and FSEZ1016A/1216 Figure 1. Typical Output V-I Characteristic
Ordering Information
Part Number Operating Temperature Range
-40C to +125C MOSFET BVDSS MOSFET RDS(ON) 9.3 (Typical)
Eco Status
Green
Package
7-Lead, Small Outline Integrated Circuit Package (SOIC)
Packing Method
Tape & Reel
FSEZ1016AMY
600V
For Fairchild's definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1 www.fairchildsemi.com
FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Application Diagram
CSN2 Bridge rectifier diode CDL RSN2 VO VDL + RSTART DSN DDD AC line RCS
1
RSN1
CSN1 NP NS
DR CO
IO
FSEZ1016A
CS DRAIN 8
CDD
NA
2 GND 3 COMI 4 COMV VDD 6 VS 5
RS1
RS2
CCOMI RCOMI CCOMV RCOMV CS
Figure 2.
Typical Application
Internal Block Diagram
Figure 3.
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1
Functional Block Diagram
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Marking Information
F - Fairchild Logo Z - Plant Code X - 1-Digit Year Code Y - 1-Digit Week Code TT - 2-Digit Die Run Code T - Package Type (M=SOIC) P - Y: Green Package M - Manufacture Flow Code
ZXYTT EZ1016A TPM
Figure 4.
Top Mark
Pin Configuration
Figure 5.
Pin Configuration
Pin Definitions
Pin # 1 2 3 4 5 6 7 8 Name
CS GND COMI COMV VS
Description
Current Sense. This pin connects a current sense resistor to sense the MOSFET current for peak-current-mode control in CV mode and provides for output-current regulation in CC mode. Ground. Constant Current Loop Compensation. This pin connects a capacitor and a resistor between COMI and GND for compensation current loop gain. Constant Voltage Loop Compensation. This pin connects a capacitor and a resistor between COMV and GND for compensation voltage loop gain. Voltage Sense. This pin detects the output voltage information and discharge time base on voltage of auxiliary winding. This pin connected two divider resistors and one capacitor. Supply. The power supply pin. IC operating current and MOSFET driving current are supplied using this pin. This pin is connected to an external VDD capacitor of typically 10F. The threshold voltages for startup and turn-off are 16V and 5V, respectively. The operating current is lower than 5mA. No connection. Drain. This pin is the high-voltage power MOSFET drain.
VDD NC DRAIN
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
VDD VVS VCS VCOMV VCOMI VDS ID IDM EAS IAR PD JA JC TJ TSTG TL ESD DC Supply Voltage
(1,2)
Parameter
VS Pin Input Voltage CS Pin Input Voltage Voltage-Error Amplifier Output Voltage Voltage-Error Amplifier Output Voltage Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TA50C) Thermal Resistance (Junction-to-Air) Thermal Resistance (Junction-to-Case) Operating Junction Temperature Storage Temperature Range Lead Temperature (Wave Soldering or IR, 10 Seconds) Electrostatic Discharge Capability Human Body Model, JEDEC: JESD22-A114 Charged Device Model, JEDEC: JESD22-C101 TC=25C TC=100C
Min.
-0.3 -0.3 -0.3 -0.3
Max.
30 7.0 7.0 7.0 7.0 600 1.0 0.6 4 33 1 660 153 39
Unit
V V V V V V A A A mJ A mW C/W C/W C C C kV
-40 -55
+150 +150 +260 2 2
Notes: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. 2. All voltage values, except differential voltages, are given with respect to GND pin.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
TA
Parameter
Operating Ambient Temperature
Conditions
Min.
-40
Typ.
Max.
+125
Unit
C
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Electrical Characteristics
VDD=15V and TA=-40C~+125C (TA=TJ), unless otherwise specified.
Symbol
VDD Section VOP VDD-ON VDD-OFF IDD-ST IDD-OP
Parameter
Continuously-Operating Voltage Turn-On Threshold Voltage Turn-Off Threshold Voltage Startup Current Operating Current
Conditions
Min.
Typ.
Max. Units
25 V V V A mA
15 4.5 016 5.0 3.7 3.5
17 5.5 10.0 5.0
IDD-GREEN VDD-OVP tD-VDDOVP
Green Mode Operating Supply Current VDD OVP Level VDD OVP Debounce Time Center Frequency Frequency Hopping Range
1.0 28 250 43 2.6 3 550 20
2.5 29 400 46 3.6
mA V s
Oscillator Section fOSC fFHR fOSC-N-MIN fOSC-CM-MIN fDV fDT Frequency KHz ms Hz KHz 5 20 % %
Frequency Hopping Period Minimum Frequency at No-Load Minimum Frequency at CCM Frequency Variation vs. VDD Deviation Frequency Variation vs. Temperature Deviation Sink Current for Brownout Protection IC Compensation Bias Current Adaptive Bias Voltage Dominated by VCOMV
Voltage-Sense Section IVS-UVP Itc VBIAS-COMV RVS=20k VCOMV=0V, TA=25C, RVS=20K 180 9.5 1.4 A A V
Current-Sense Section tPD tMIN-N tMINCC VTH VIR II-SINK II-SOURCE VI-HGH Propagation Delay to Gate Output Minimum On Time at No-Load Minimum On Time in CC Mode Threshold Voltage for Current Limit Reference Voltage Output Sink Current Output Source Current Output High Voltage VCS=3V, VCOMI=2.5V VCS=0V, VCOMI=2.5V VCS=0V 4.5 2.475 VVS= -0.8V, RCS=2k VCOMV=1V VVS=0V, VCOMV=2V 100 1100 300 1.3 2.500 55 55 2.525 200 ns ns ns V V A A V
Current-Error-Amplifier Section
Continued on the following page...
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Electrical Characteristics (Continued)
VDD=15V and TA=-40C~+125C (TA=TJ), unless otherwise specified.
Symbol
VVR VN VG IV-SINK IV-SOURCE VV-HGH DCYMAX BVDSS
Parameter
Reference Voltage Green-Mode Starting Voltage on COMV Pin Green-Mode Ending Voltage on COMV Pin Output Sink Current Output Source Current Output High Voltage Maximum Duty Cycle Drain-Source Breakdown Voltage
Conditions
Min.
2.475
Typ.
2.500 2.8 0.8 90 90
Max. Units
2.525 V V V A A V
Voltage-Error-Amplifier Section
fS=fOSC-2KHz, VVS=2.3V fS=1KHz VVS=3V, VCOMV=2.5V VVS=2V, VCOMV=2.5V VVS=2.3V 4.5
Internal MOSFET Section 75 ID=250A, VGS=0V ID=250A, Referenced to 25C 600 0.6 1 4 ID=0.5A, VGS=10V VDS=600V, VGS=0V, TC=25C VDS=480V, VGS=0V, TC=100C VDS=300V, ID=1.1A, RG=25 7 21 13 27 VGS=0V, VDS=25V fS=1MHz 130 19 140 9.3 11.5 1 10 24 52 36 64 170 25 % V V/C A A A A ns ns ns ns pF pF C
BVDSS /TJ Breakdown Voltage Temperature Coefficient IS ISM RDS(ON) Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Static Drain-Source On-Resistance
IDSS
Drain-Source Leakage Current
tD-ON tr tD-OFF tf CISS COSS TOTP
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance
(3,4)
Over-Temperature-Protection Section Threshold Temperature for OTP Notes: 3. Pulse Test: pulse width 300s; duty cycle 2%. 4. Essentially independent of operating temperature.
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Typical Performance Characteristics
17 5.5
16.6
5.3
16.2
VDD-OFF (V)
-40 -30 -15 0 25 50 75 85 100 125
VDD-ON (V)
5.1
15.8
4.9
15.4
4.7
15
4.5 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 6.
Turn-On Threshold Voltage (VDD-ON) vs. Temperature
Figure 7.
Turn-Off Threshold Voltage (VDD-OFF) vs. Temperature
4.5
45 44 43 42 41 40 39
4.1
IDD-OP (mA)
3.7
3.3
2.9
2.5 -40 -30 -15 0 25 50 75 85 100 125
fOSC (KHz)
-40
-30
-15
0
25
50
75
85
100
125
Temperature (C)
Temperature (C)
Figure 8.
Operating Current (IDD-OP) vs. Temperature
Figure 9.
Center Frequency (fOSC) vs. Temperature
2.525
2.525
2.515
2.515
VVR (V)
2.495
VIR (V)
-40 -30 -15 0 25 50 75 85 100 125
2.505
2.505
2.495
2.485
2.485
2.475
2.475 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 10. Reference Voltage (VVR) vs. Temperature
Figure 11. Reference Voltage (VIR) vs. Temperature
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Typical Performance Characteristics (Continued)
600 25
560
23
520
fOSC-CM-MIN (KHz)
-40 -30 -15 0 25 50 75 85 100 125
fOSC-N-MIN (Hz)
21
480
19
440
17
400
15 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 12. Minimum Frequency at No Load (fOSC-N-MIN) vs. Temperature
Figure 13. Minimum Frequency at CCM (fOSC-CM-MIN) vs. Temperature
30 25
1300
1200
SG (KHz/V)
tMIN-N (ns)
20 15 10 5 0 -40 -30 -15 0 25 50 75 85 100 125
1100
1000
900
800 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 14. Green-Mode Frequency Decreasing Rate (SG) vs. Temperature
Figure 15. Minimum On-Time at No-Load (tMIN-N) vs. Temperature
5
1
4
0.8
2
VG (V)
-40 -30 -15 0 25 50 75 85 100 125
VN (V)
3
0.6
0.4
1
0.2
0
0 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 16. Green-Mode Starting Voltage on COMV Pin (VN) vs. Temperature
Figure 17. Green-Mode Ending Voltage on COMV Pin (VG) vs. Temperature
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Typical Performance Characteristics (Continued)
95 95
92
91
89
IV-SOURCE (A)
-40 -30 -15 0 25 50 75 85 100 125
IV-SINK (A)
87
86
83
83
79
80
75 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 18. Output Sink Current (IV-SINK) vs. Temperature
Figure 19. Output Source Current (IV-SOURCE) vs. Temperature
65
65
62
62
59
II-SOURCE (A)
-40 -30 -15 0 25 50 75 85 100 125
II-SINK (A)
59
56
56
53
53
50
50 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 20. Output Sink Current (II-SINK) vs. Temperature
Figure 21. Output Source Current (II-SOURCE) vs. Temperature
800 750
80
76
DCYMAX (%)
BVDSS (V)
700 650 600 550 500 -40 -30 -15 0 25 50 75 85 100 125
72
68
64
60 -40 -30 -15 0 25 50 75 85 100 125
Temperature (C)
Temperature (C)
Figure 22. Drain-Source Breakdown Voltage (BVDSS) vs. Temperature
Figure 23. Maximum Duty Cycle (DCYMAX) vs. Temperature
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Functional Description
Figure 1 shows the basic circuit diagram of a primaryside regulated flyback converter, with typical waveforms shown in Figure 25. Generally, discontinuous conduction mode (DCM) operation is preferred for primary-side regulation because it allows better output regulation. The operation principles of DCM flyback converter are as follows: During the MOSFET ON time (tON), input voltage (VDL) is applied across the primary-side inductor (Lm). Then MOSFET current (Ids) increases linearly from zero to the peak value (Ipk). During this time, the energy is drawn from the input and stored in the inductor. When the MOSFET is turned off, the energy stored in the inductor forces the rectifier diode (D) to turn on. While the diode is conducting, the output voltage (VO), together with diode forward-voltage drop (VF), are 2 applied across the secondary-side inductor (LmxNs / 2 Np ) and the diode current (ID) decreases linearly from the peak value (Ipkx Np/Ns) to zero. At the end of inductor current discharge time (tDIS), all the energy stored in the inductor has been delivered to the output. When the diode current reaches zero, the transformer auxiliary winding voltage (VW) begins to oscillate by the resonance between the primary-side inductor (Lm) and the effective capacitor loaded across MOSFET. During the inductor current discharge time, the sum of output voltage and diode forward-voltage drop is reflected to the auxiliary winding side as (VO+VF)x NA/NS. Since the diode forward-voltage drop decreases as current decreases, the auxiliary winding voltage reflects the output voltage best at the end of diode conduction time where the diode current diminishes to zero. By sampling the winding voltage at the end of the diode conduction time, the output voltage information can be obtained. The internal error amplifier for output voltage regulation (EA_V) compares the sampled voltage with internal precise reference to generate error voltage (VCOMV), which determines the duty cycle of the MOSFET in CV mode. Meanwhile, the output current can be estimated using the peak drain current and inductor current discharge time since output current is the same as the average of the diode current in steady state. The output current estimator detects the peak value of the drain current by a peak detection circuit and calculates the output current by the inductor discharge time (tDIS) and switching period (tS). This output information is compared with the internal precise reference to generate error voltage (VCOMI), which determines the duty cycle of the MOSFET in CC mode. With Fairchild's innovative technique TRUECURRENTTM, constant current (CC) output can be precisely controlled. Of the two error voltages, VCOMV and VCOMI, the smaller determines the duty cycle. During constant voltage regulation mode, VCOMV determines the duty cycle while VCOMI is saturated to HIGH. During constant current regulation mode, VCOMI determines the duty cycle while VCOMV is saturated to HIGH.
Np:Ns D + V DL Lm + VF + VO L O A D
ID
IO
VAC
Ids
EA_I V COMI PWM Control V COMV EA_V IO Estimator Ref t DIS Detector VO Estimator Ref
CS RCS
VS VDD RS1 RS2 NA + Vw -
Primary-Side Regulation Controller
Figure 24. Simplified PSR Flyback Converter Circuit
Id s (MOSFET Drain-to-Source Current)
I pk
ID (Diode Current)
I pk *
NP NS
I D .avg = I
o
VW (Auxiliary Winding Voltage)
VF *
NA NS
VO *
NA NS
t ON t
S
t
DI S
Figure 25. Key Waveforms of DCM Flyback Converter
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Temperature Compensation
Built-in temperature compensation provides constant voltage regulation over a wide range of temperature variation. This internal compensation current compensates the forward-voltage drop variation of the secondary-side rectifier diode.
Gate Drive Signal
ts ts
Green-Mode Operation
The FSEZ1016A uses voltage regulation error amplifier output (VCOMV) as an indicator of the output load and modulates the PWM frequency, as shown in Figure 26, such that the switching frequency decreases as load decreases. In heavy-load conditions, the switching frequency is fixed at 43KHz. Once VCOMV decreases below 2.8V, the PWM frequency starts to linearly decrease from 43KHz to 550Hz to reduce the switching losses. As VCOMV decreases below 0.8V, the switching frequency is fixed at 550Hz and FSEZ1016A enters "deep green" mode, where the operating current drops to 1mA, reducing the standby power consumption.
Swi tching Fr equen cy
ts fs
45.6kHz 43 .0kHz 40 .4kHz
3ms
43 kH z
t
Figure 27. Frequency Hopping
Startup
Figure 28 shows the typical startup circuit and transformer auxiliary winding for a FSEZ1016A application. Before FSEZ1016A begins switching, it consumes only startup current (typically 10A) and the current supplied through the startup resistor charges the VDD capacitor (CDD). When VDD reaches turn-on voltage of 16V (VDD-ON), FSEZ1016A begins switching, and the current consumed increases to 3.5mA. Then, the power required for FSEZ1016A is supplied from the transformer auxiliary winding. The large hysteresis of VDD provides more hold-up time, which allows using a small capacitor for VDD.
Dee p G ree n Mod e 550H z 0 .8 V
G reen Mod e
No rmal Mod e
2 .8 V
V COMV
Figure 26. Switching Frequency in Green Mode
Leading-Edge Blanking (LEB)
At the instant the MOSFET is turned on, there is a highcurrent spike through the MOSFET, caused by primaryside capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the RCS resistor can lead to premature turn-off of the MOSFET. FSEZ1016A employs an internal leading-edge blanking (LEB) circuit to inhibit the PWM comparator for a short time after the MOSFET is turned on. External RC filtering is not required.
CDL
VDL + RSTART DDD
Np
AC line
CDD
NA
FSEZ1016A
1
CS DRAIN 8
Frequency Hopping
EMI reduction is accomplished by frequency hopping, which spreads the energy over a wider frequency range than the bandwidth measured by the EMI test equipment. FSEZ1016A has an internal frequencyhopping circuit that changes the switching frequency between 40.4kHz and 45.6kHz with a period of 3ms, as shown in Figure 27.
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1
2 GND 3 4
RS1
VDD VS
COMI COMV
6 5 RS2
Figure 28. Startup Circuit
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FSEZ1016A (EZSWITCHTM) -- Primary-Side-Regulation PWM Integrated Power MOSFET
Protections
The FSEZ1016A has several self-protective functions, such as Over-Voltage Protection (OVP), OverTemperature Protection (OTP), and brownout protection. All the protections are implemented as autorestart mode. When the auto-restart protection is triggered, switching is terminated and the MOSFET remains off. This causes VDD to fall. When VDD reaches the VDD turn-off voltage of 5V, the current consumed by FSEZ1016A reduces to the startup current (maximum 10A) and the current supplied startup resistor charges the VDD capacitor. When VDD reaches the turn-on voltage of 16V, FSEZ1016A resumes normal operation. In this manner, the auto-restart alternately enables and disables the switching of the MOSFET until the fault condition is eliminated (see Figure 29).
Power On Fault Occurs Fault Removed
VDD Over-Voltage Protection (OVP) VDD over-voltage protection prevents damage from overvoltage conditions. If the VDD voltage exceeds 28V by open-feedback condition, OVP is triggered. The OVP has a debounce time (typical 250s) to prevent false triggering by switching noise. It also protects other switching devices from over voltage. Over-Temperature Protection (OTP) A built-in temperature-sensing circuit shuts down PWM output if the junction temperature exceeds 140C. Brownout Protection FSEZ1016A detects the line voltage using auxiliary winding voltage since the auxiliary winding voltage reflects the input voltage when the MOSFET is turned on. The VS pin is clamped at 1.15V while the MOSFET is turned on and brownout protection is triggered if the current out of the VS pin is less than IVS-UVP (typical 180A) during the MOSFET conduction. Pulse-by-Pulse Current Limit When the sensing voltage across the current sense resistor exceeds the internal threshold of 1.3V, the MOSFET is turned off for the remainder of the switching cycle. In normal operation, the pulse-by-pulse current limit is not triggered since the peak current is limited by the control loop.
VDS
VDD
16V
5V
Operating Current
3.5mA 10A Normal Operation Fault Situation Normal Operation
Figure 29. Auto-Restart Operation
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FSEZ1016A -- Primary-Side-Regulation PWM Integrated Power MOSFET
Typical Application Circuit (Primary-Side Regulated Offline LED Driver)
Application Offline LED Driver Fairchild Devices FSEZ1016A Input Voltage Range 90~265VAC Output 12V/0.35A (4.2W)
Features
High Efficiency (>74% at Full Load) Tight Output Regulation (CC:5%)
80 79 78 77 76 75 74 73 72 71 70 90 120 150 180
Line Voltage (Vac)
18 AC90V 16 AC230V 14 AC264V AC120V
12 Output Voltage (V)
Efficiency (%)
10
8
6
4
2
0
210
240
270
0
50
100
150
200
250
300
350
400
Output current (mA)
Figure 30. Measured Efficiency and Output Regulation
Figure 31. Schematic of Typical Application Circuit
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FSEZ1016A -- Primary-Side-Regulation PWM Integrated Power MOSFET
Typical Application Circuit (Continued)
Transformer specification
Core: EE16 Bobbin: EE16
Pin
Primary-Side Inductance Primary-Side Effective Leakage 21 21
Specifications
1.95mH 8% 60H Maximum 100kHz, 1V
Remark
Short one of the secondary windings
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FSEZ1016A -- Primary-Side-Regulation PWM Integrated Power MOSFET
Physical Dimensions
5.00 4.80 3.81
8 5
A
0.65
B
6.20 5.80
4.00 3.80
1 4
1.75
5.60
PIN ONE INDICATOR
(0.33) 0.25 0.10 1.75 MAX
1.27
0.25
M
CBA
1.27
LAND PATTERN RECOMMENDATION SEE DETAIL A
C 0.10 0.51 0.33 0.50 x 45 0.25 C
0.25 0.19
OPTION A - BEVEL EDGE
R0.10 R0.10
GAGE PLANE
0.36
OPTION B - NO BEVEL EDGE
NOTES: A) THIS PACKAGE CONFORMS TO JEDEC MS-012 VARIATION AA EXCEPT FOR MISSING PIN 7. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) DRAWING FILENAME: M07AREV2
8 0 0.90 0.406
SEATING PLANE
(1.04)
DETAIL A
SCALE: 2:1
Figure 32.
7-Lead, Small-Outline Integrated Circuit Package (SOIC)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/.
(c) 2009 Fairchild Semiconductor Corporation FSEZ1016A Rev. 1.0.1
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FSEZ1016A -- Primary-Side-Regulation PWM Integrated Power MOSFET
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